Shin, Wonjun Kim, Sangwoo Koo, Ryun-Han Kwon, Dongseok Kim, Jae-Joon Kwon, Deok-Hwang Kwon, Daewoong Lee, Jong-Ho 2024-01-19T09:30:55Z 2024-01-19T09:30:55Z 2023-07-06 2023-06 0741-3106 https://pubs.kist.re.kr/handle/201004/113651 In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls). The findings reveal that the magnitude of 1/f noise decreases with a decrease in L, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L. English Institute of Electrical and Electronics Engineers Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors Article 10.1109/LED.2023.3267134 1 IEEE Electron Device Letters, v.44, no.6, pp.1003 - 1006 IEEE Electron Device Letters 44 6 1003 1006 N scie scopus 001001401500032 2-s2.0-85153494520 Engineering, Electrical & Electronic Engineering Article NANOWIRE TRANSISTORS Channel length 1/f noise ferroelectric junctionless thin-film transistor (FE JL TFT) low-frequency noise (LFN)