Kwon, Yonghyun Albert Kim, Jihyun Jo, Sae Byeok Roe, Dong Gue Rhee, Dongjoon Song, Younguk Kang, Byoungwoo Kim, Dohun Kim, Jeongmin Kim, Dae Woo Kang, Moon Sung Kang, Joohoon Cho, Jeong Ho 2024-01-19T09:31:19Z 2024-01-19T09:31:19Z 2023-06-22 2023-06 2520-1131 https://pubs.kist.re.kr/handle/201004/113672 Arrays of thin-film transistors can be fabricated on the 5-inch wafer scale using solution-based processing of molybdenum disulfide and sodium-embedded alumina inks for the semiconductor and gate dielectric, respectively, yielding devices with room-temperature mobilities of up to 80 cm(2) V-1 s(-1). Two-dimensional materials made via solution processing could be used to create next-generation electronic devices at scale. However, existing solution processing methods typically have a trade-off between scalability and material quality, which makes them unsuitable for practical applications. Here we show that wafer-scale arrays of molybdenum-disulfide-based transistors can be fabricated using a commercial slot-die printing process. We create inks of molybdenum disulfide nanosheets and sodium-embedded alumina for printing of the semiconductor and gate dielectric layer, respectively. The transistors exhibit average charge carrier mobilities of 80.0 cm(2) V-1 s(-1) in field-effect transistor measurements and 132.9 cm(2) V-1 s(-1) in Hall measurements at room temperature. The high charge carrier mobility is attributed to the sodium-embedded alumina gate dielectric, which causes a band-like charge carrier transport in the molybdenum-disulfide-nanosheet-based thin-film networks. We use the transistors to create various logic gates, including NOT, NOR, NAND and static random-access memory. English NATURE PUBLISHING GROUP Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina Article 10.1038/s41928-023-00971-7 1 Nature Electronics, v.6, no.6, pp.443 - 450 Nature Electronics 6 6 443 450 N scie scopus 001003229900001 2-s2.0-85161365517 Engineering, Electrical & Electronic Engineering Article THIN-FILM TRANSISTORS ATOMIC LAYER DEPOSITION LOW-VOLTAGE GATE DIELECTRICS MOS2 MECHANISMS TRANSPORT DEPENDENCE MOBILITY GEL