Woo, Seungwan Yeon, Eungbeom Chu, Rafael Jumar Kyhm, Jihoon Son, Hoki Jang, Ho Won Jung, Daehwan Choi, Won Jun 2024-01-19T09:32:12Z 2024-01-19T09:32:12Z 2023-04-06 2023-06 0169-4332 https://pubs.kist.re.kr/handle/201004/113717 Epitaxial growth of bulk InAs1-xSbx layer on GaAs substrate could open an opportunity for cost-competitive long -wavelength infrared sensors. Achieving this requires a high-quality metamorphic InAsSb layer with a uniform strain relief buffer design. We report a comprehensive analysis of metamorphic InAsSb layers grown on InAs/ GaAs virtual substrate for 0.1 eV low bandgap material with an optimized growth condition and group-V flux control. We find that InAsSb surface roughens significantly with increasing Sb composition up to 58%. Lowering the growth temperature of InAsSb layers from 450 degrees C to 425 degrees C mitigated surface roughening while allowing greater than 90% strain relaxation. Moreover, we also present a dramatically increasing threading dislocation density by more than 200 times as a consequence of high Sb composition. Finally, we demonstrate a narrow energy bandgap of 0.13 eV at 10 K in the InAs0.42Sb0.58 layer, which is close to 0.1 eV at room temperature. This InAsSb film grown on InAs/GaAs template paves the way for long-wavelength infrared optoelectronics applications. English Elsevier BV Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications Article 10.1016/j.apsusc.2023.156899 1 Applied Surface Science, v.623 Applied Surface Science 623 Y scie scopus 000951836000001 2-s2.0-85150075101 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article SURFACE-MORPHOLOGY LAYER DISLOCATIONS RELAXATION MISFIT GAAS INSB InAsSb Metamorphic growth Strain engineering Threading dislocation density Long -wavelength infrared Molecular beam epitaxy