Han, Ki Hyuk Park, Youn Ho Ahn, Jeong Ung Kim, Seong Been Kim, Kyoung-Whan Park, Tae-Eon Lee, OukJae Min, Byoung-Chul Koo, Hyun Cheol 2024-01-19T09:33:08Z 2024-01-19T09:33:08Z 2023-05-25 2023-05 2637-6113 https://pubs.kist.re.kr/handle/201004/113763 Sputtered Bi2Se3 has strong potential for use as a topological insulator in spintronic devices because of its perfect spin polarization and ability to be grown on a large scale. In a Bi2Se3/Ni81Fe19 device, electric field control of spin-orbit torque is clearly observed using second-harmonic measurements. The gate voltage modulates the Fermi level as well as the channel types (i.e., p-or n-type). The strengths of damping-like and field-like torques induced by current are separately extracted for various gate voltages. We find that only damping-like torque is modulated by the gate electric field, showing its maximum value near the Dirac point. In addition, thermal effects mixed with spin-orbit torques are also resolved on the basis of the magnetic field dependence. This work not only evaluates the magnitudes of spin-orbit torques quantitatively but also demonstrates the gate-controlled damping-like torque in a sputtered topological insulator/ferromagnet bilayer. English AMER CHEMICAL SOC Gate Control of Spin-Orbit Torque in a Sputtered Bi2Se3/Ni81Fe19 Device Article 10.1021/acsaelm.3c00202 1 ACS Applied Electronic Materials, v.5, no.5, pp.2725 - 2731 ACS Applied Electronic Materials 5 5 2725 2731 N scie scopus 000984349000001 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article PRECESSION topological insulator spin-orbit torque second-harmonic technique Bi2Se3 gate field