Kim, Hayun Oh, Hyunuk Yoo, Hyunjun Cho, Kyungjune Lee, Takhee Chung, Seungjun Lee, Byeongmoon Hong, Yongtaek 2024-01-19T09:34:20Z 2024-01-19T09:34:20Z 2023-05-04 2023-04 2637-6113 https://pubs.kist.re.kr/handle/201004/113818 Single-walled carbon nanotube (SWCNT) random networks have become strong candidates for next-generation electronics due to their exceptional mechanical, electrical, and optical properties. However, metallic nanotubes in networks generally incur a trade-off between the charge carrier mobility and on/off ratio, limiting the performance of SWCNT-based devices. Therefore, various methods to increase the purity of semiconducting nanotubes in entire random networks have been reported, but this direction has faced other issues, such as nanotube shortening, higher cost, and higher energy. Here, we introduce SWCNT random network-based thin-film transistors (SWCNT TFTs) with a varying purity profile of semiconducting SWCNTs across the channel, exploiting the superior mobility of metallic SWCNTs by partially tuning the semiconducting SWCNT purity and developing a novel perspective on metallic nanotubes in semiconductor channels. Based on the high-precision drop-on-demand capability of inkjet printing and various concentrations of semiconducting SWCNT ink, we form selectively patterned channel regions with different semiconducting SWCNT purities. The metallic nanotube-dominant region drastically increases the carrier density with a minimized Schottky barrier, while high-purity semiconducting regions at the channel boundaries effectively block off-state leakage through carrier depletion. As a result, the SWCNT TFTs with selectively patterned metallic nanotube regions show superior carrier mobility (75.50 cm2 V-1 s-1) and channel width normalized on-current (34.33 nA mu m-1) without compromising the on/off ratio (1.62 x 107). To show the feasibility of our device in high-performance electronics, we demonstrate all-inkjet-printed flexible display driving circuits with two transistors that enable low-power, high-performance operation in display applications. English AMER CHEMICAL SOC Selective Purity Modulation of Semiconducting Single-Walled Carbon Nanotube Networks for High-Performance Thin-Film Transistors Article 10.1021/acsaelm.2c01685 1 ACS Applied Electronic Materials, v.5, no.4, pp.2055 - 2064 ACS Applied Electronic Materials 5 4 2055 2064 N scie scopus 000972665300001 2-s2.0-85151234840 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article SEPARATION energy band engineering inkjet printing percolation pathway single-walled carbon nanotube thin-film transistor channel purity engineering