Lung, Quang Nhat Dang Chu, Rafael Jumar Kim, Yeonhwa Laryn, Tsimafei Madarang, May Angelu Kovalchuk, Oleksiy Song, Yong-Won Lee, In-Ho Choi, Changsoon Choi, Won Jun Jung, Daehwan 2024-01-19T09:34:32Z 2024-01-19T09:34:32Z 2023-04-27 2023-04 1530-6984 https://pubs.kist.re.kr/handle/201004/113829 Fabrication of high quantum efficiency nanoscale device is challenging due to increased carrier loss at surface. Low dimensional materials such 0D quantum dots and 2D materials have been widely studied to mitigate the loss. Here, we demonstrate a strong photoluminescence enhancement from graphene/III-V quantum dot mixed-dimensional heterostructures. The distance between graphene and quantum dots in the 2D/0D hybrid structure determines the degree of radiative carrier recombination enhancement from 80% to 800% compared to the quantum dot only structure. Time-resolved photoluminescence decay also shows increased carrier lifetimes when the distance decreases from 50 to 10 nm. We propose that the optical enhancement is due to energy band bending and hole carrier transfer, which repair the imbalance of electron and hole carrier densities in quantum dots. This 2D graphene/0D quantum dot heterostructure shows promise for high performance nanoscale optoelectronic devices. English American Chemical Society Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer Article 10.1021/acs.nanolett.3c00321 1 Nano Letters, v.23, no.8, pp.3344 - 3351 Nano Letters 23 8 3344 3351 N scie scopus 000968391000001 2-s2.0-85152205861 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access quantum dot heterostructure photoluminescence mixed-dimension graphene