Chae, Myeong Gil Kim, Jina Jang, Hee Won Park, Bo Keun Chung, Taek-Mo Kim, Seong Keun Han, Jeong Hwan 2024-01-19T09:34:36Z 2024-01-19T09:34:36Z 2023-04-20 2023-04 2637-6113 https://pubs.kist.re.kr/handle/201004/113832 High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 degrees C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13- 7.24 cm2/V center dot s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104-105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs. English AMER CHEMICAL SOC High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor Article 10.1021/acsaelm.2c01107 1 ACS Applied Electronic Materials, v.5, no.4, pp.1992 - 1999 ACS Applied Electronic Materials 5 4 1992 1999 N scie scopus 000963728100001 2-s2.0-85147582396 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article; Early Access ATOMIC LAYER DEPOSITION BIAS STRESS STABILITY TIN MONOXIDE PHASE GROWTH atomic layer deposition SnO mobility on off current ratio p-type thin-film transistor