Liu, Songtao Bowers, John Norman, Justin C. Jung, Daehwan Dumont, Mario Shang, Chen Wan, Yating Kennedy, M. J. Dong, Bozhang Auth, Dominik Breuer, Stefan Grillot, Frederic Chow, Weng Gossard, Arthur Wu, Xinru 2024-01-19T09:37:42Z 2024-01-19T09:37:42Z 2022-02-25 2020-02 0277-786X https://pubs.kist.re.kr/handle/201004/113849 In this paper we review our recent progress on high performance mode locked InAs quantum dot lasers that are directly grown on CMOS compatible silicon substrates by solid-source molecular beam epitaxy. Different mode locking configurations are designed and fabricated. The lasers operate within the O-band wavelength range, showing pulsewidth down to 490 fs, RF linewidth down to 400 Hz, and pulse-to-pulse timing jitter down to 6 fs. When the laser is used as a comb source for wavelength division multiplexing transmission systems, 4.1 terabit per second transmission capacity was achieved. Self-mode locking is also investigated both experimentally and theoretically. The demonstrated performance makes those lasers promising light source candidates for future large-scale silicon electronic and photonic integrated circuits (EPICs) with multiple functionalities. English SPIE-INT SOC OPTICAL ENGINEERING High-performance mode-locked lasers on silicon Conference 10.1117/12.2552224 1 Conference on Physics and Simulation of Optoelectronic Devices XXVIII Conference on Physics and Simulation of Optoelectronic Devices XXVIII US San Francisco, CA 2020-02-03 PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIII 000651823800027 2-s2.0-85097656514