Kaur, B. Bhardwaj, R. Singh, J. P. Asokan, K. Chae, K. H. Goyal, N. Gautam, S. 2024-01-19T09:37:50Z 2024-01-19T09:37:50Z 2022-03-07 2020 0094-243X https://pubs.kist.re.kr/handle/201004/113854 MgO thin films are grown on Si(100)-substrate by radio frequency (RF) sputtering technique and then implanted with transition metal (TM) ions i.e. Co, Cu and Ni. The ion implantation is performed at 100 keV with five fluences of 1 x 10(15) (1E15), 5 x 10(15) (5E15), 1 x 10(16) (1E16), 2.5 x 10(16) (2.5E16) and 5 x 10(16) (5E16) ions/cm(2), respectively. Stopping and Range of Ions in Matter (SRIM) calculations and Transport of Ions in Matter (TRIM) simulations are performed to estimate the doping concentration, average vacancy/ion, projected range etc. for implanted ions. These calculations are further crosschecked using high resolution transmission electron microscopy (HRTEM) studies. X-ray absorption spectroscopy (XAS) measurements performed at metal K and L-3,L-2-edges reveal the valance state, co-ordination number to explore the electronic structure of modified MgO matrix. English AMER INST PHYSICS Valence State and Co-ordination of Implanted Ions in MgO Conference 10.1063/5.0001400 1 3rd International Conference on Condensed Matter & Applied Physics (ICC), v.2220 3rd International Conference on Condensed Matter & Applied Physics (ICC) 2220 US Bikaner, INDIA 2019-10-14 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019) 000557899501053 Proceedings Paper