Asghar, Ghulam Dong, Xue Chae, Sudong Yoo, Chan-Sei Jeon, Jiho Woo, Chaeheon Kim, Tae Yeong Ahn, Jungyoon Zhang, Xiaojie Oh, Hyung-Suk Yu, Hak Ki Choi, Jae-Young 2024-01-19T10:00:17Z 2024-01-19T10:00:17Z 2023-03-30 2023-04 0167-577X https://pubs.kist.re.kr/handle/201004/113876 Dielectric materials with low dielectric constant and low loss are in high demand due to the rapid development of telecommunication systems toward 5G and 6G. In this work, a modified solid-state reaction method is reported for the synthesis of low dielectric constant forsterite (Mg2SiO4) at low calcination temperatures by using MgO and fumed silica nanoparticles (NPs). The forsterite phase was obtained at 1000 degrees C, where the sintering temperature was reduced from 1500 degrees C to 1200 degrees C. As-synthesized forsterite has a low dielectric constant of 3.9 with low tan delta = 0.00047 at 1 GHz. Low-temperature sintered forsterite is suitable for microelectronics applications. English Elsevier BV Dielectric properties of low-temperature sintered forsterite (Mg2SiO4) using high-dispersion and nanoparticle-based solid-state reaction process Article 10.1016/j.matlet.2023.134009 1 Materials Letters, v.337 Materials Letters 337 N scie scopus 000949732000001 2-s2.0-85147541710 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article PHASE Forsterite Dielectric constant Mg2SiO4