Kim, Bong Ho Kuk, Song-Hyeon Kim, Seong Kwang Kim, Joon Pyo Suh, Yoon-Je Jeong, Jaeyong Geum, Dae-Myeong Baek, Seung-Hyub Kim, Sang Hyeon 2024-01-19T10:00:24Z 2024-01-19T10:00:24Z 2023-03-23 2023-04 0018-9383 https://pubs.kist.re.kr/handle/201004/113880 demonstrated improved switching volt-age and retention and endurance characteristics in HfZrOx (HZO)-based ferroelectric field-effect transistors (FeFETs) via oxygen scavenging with Sc. Insertion of Sc into the gate-stack successfully reduced the thickness of the inter-facial SiOx layer (IL) between HZO and Si; thus, the FeFET with Sc could perform an immediate read-after-write at a 2-V pulse. In addition, although the IL thickness became thinner, the endurance characteristics of FeFETs with Sc were improved up to 10(10) cycles, due to the lower Vg required for the same memory window (MW) and less trapping when positive pulses are applied. We believe that this work contributes to the low-voltage operation of FeFET and proposes the potential of oxygen scavenging. English Institute of Electrical and Electronics Engineers Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors Article 10.1109/TED.2023.3244900 1 IEEE Transactions on Electron Devices, v.70, no.4, pp.1996 - 2000 IEEE Transactions on Electron Devices 70 4 1996 2000 N scie scopus 000940205400001 2-s2.0-85149391150 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Early Access RELIABILITY LAYER Ferroelectric field-effect transistor (FeFET) hafnium zirconium oxide low operating voltage oxygen scavenging scandium