Chu, Rafael Jumar Abella Kim, Yeonhwa Woo, Seungwan 최원준 정대환 2024-01-19T10:00:46Z 2024-01-19T10:00:46Z 2023-09-07 2023-03 2731-9229 https://pubs.kist.re.kr/handle/201004/113893 InAs quantum dashes (Qdash) engineered to emit near 2 mu m are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-mu m wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 x boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-mu m communications, spectroscopy, and sensing. English SPRINGER Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission Article 10.1186/s11671-023-03810-y 1 Discover Nano, v.18, no.1 Discover Nano 18 1 Y scie 001049072100002 2-s2.0-85149966344 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article SUBSTRATE SIZE