Jin, Taewon Kim, Sanghyeon Han, Jae-Hoon Ahn, Dae-Hwan An, Seong Ui Noh, Tae Hyeon Sun, Xinkai Kim, Cheol Jun Park, Juhyuk Kim, Younghyun 2024-01-19T10:02:51Z 2024-01-19T10:02:51Z 2023-01-26 2023-03 2516-0230 https://pubs.kist.re.kr/handle/201004/113978 We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT. English The Royal Society of Chemistry Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays Article 10.1039/d2na00713d 1 Nanoscale Advances, v.5, no.5, pp.1316 - 1322 Nanoscale Advances 5 5 1316 1322 Y scie scopus 000907635600001 2-s2.0-85146129569 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article HF0.5ZR0.5O2 THIN-FILMS THRESHOLD VOLTAGE PIXEL CIRCUIT GRAIN-SIZE COMPENSATION MEMORY MOBILITY