Song, Young Geun Kim, Ji Eun Kwon, Jae Uk Chun, Suk Yeop Keunho Soh Nahm, Sahn Kang, Chong-Yun Yoon, Jung Ho 2024-01-19T10:03:53Z 2024-01-19T10:03:53Z 2023-03-10 2023-02 1944-8244 https://pubs.kist.re.kr/handle/201004/114019 Active cation-based diffusive memristors featuring essentially volatile threshold switching have been proposed for novel applications, such as a selector in a one-selector-and-one-resistor structure and signal generators in neuromorphic computing. However, the high variability of the switching behavior, which results from the high electroforming voltage, external environmental conditions, and transition to the non-volatile switching mode in a high-current range, is considered a major impediment to such applications. Herein, for the first time, we developed a highly reliable threshold switching device immune to atmospheric changes based on an ultraviolet-ozone (UVO)-treated diffusive memristor consisting of Ag and SiO2 nanorods (NRs). UVO treatment forms a stable water reservoir on the surface of SiO2 NRs, facilitating the redox reaction and ion migration of Ag. Consequently, diffusive memristors possess reliable switching characteristics, including electroforming-free, repeatable, and consistent switching with resistance to changes in ambient conditions and compliance levels during operation. We demonstrated that our approach is suitable for various metal oxides and can be used in numerous applications. English American Chemical Society Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes Article 10.1021/acsami.2c21019 1 ACS Applied Materials & Interfaces, v.15, no.4, pp.5495 - 5503 ACS Applied Materials & Interfaces 15 4 5495 5503 N scie scopus 000924705400001 2-s2.0-85147111093 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article; Early Access DEVICES SELECTOR MEMORIES diffusive memristors UVO treatment nanorods artificial neurons