Lim, Taebin Lee, Suhui Lee, Jiseob Choi, HyungJin Jung, Byunglib Baek, SeungHyub Jang, Jin 2024-01-19T10:04:48Z 2024-01-19T10:04:48Z 2023-01-13 2023-02 1616-301X https://pubs.kist.re.kr/handle/201004/114063 Artificial synapses are a key component of neuromorphic computing systems. To achieve high-performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (approximate to 10(15)). In this work, a coplanar synaptic, thin-film transistor (TFT) made of c-axis-aligned crystalline indium gallium tin oxide (CAAC-IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired-pulse depression (PPD), short-term plasticity (STP), and long-term plasticity at V-DS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (V-o(+)/V-o(++)) in the CAAC-IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous works use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal-oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC-IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips. English John Wiley & Sons Ltd. Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric-Like C-Axis-Aligned Crystalline InGaSnO Semiconductor Thin-Film Transistors for Highly Integrated Neuromorphic Electronics Article 10.1002/adfm.202212367 1 Advanced Functional Materials, v.33, no.8 Advanced Functional Materials 33 8 N scie scopus 000899344300001 2-s2.0-85144387124 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TIN OXIDE FIELD GATE MOBILITY NETWORK NEURONS CHANNEL DEVICES indium gallium tin oxide neuromorphic systems synaptic transistors thin-film transistors c-axis-aligned crystals ferroelectric-like semiconductors