Geum, Dae-Myeong Kim, SangHyeon Kim, SeongKwang Yoon, Euijoon Kylun, JiHoon Song, Jindong Choi, Won Jun Kang, SooSeok 2024-01-19T10:08:22Z 2024-01-19T10:08:22Z 2022-02-28 2019-06 https://pubs.kist.re.kr/handle/201004/114085 Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR. English IEEE Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection Conference 1 39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits, pp.T248 - T249 39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits T248 T249 US Kyoto, JAPAN 2019-06-09 2019 SYMPOSIUM ON VLSI TECHNOLOGY 000555822600045