Kuk, Song-Hyeon Han, Seungmin Lee, Dong Hyun Kim, Bong Ho Shim, Joonsup Park, Min Hyuk Han, Jae-Hoon Kim, Sang-Hyeon 2024-01-19T10:30:18Z 2024-01-19T10:30:18Z 2023-03-16 2023-01 0741-3106 https://pubs.kist.re.kr/handle/201004/114110 We propose a higher-kappa non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently, our HfZrOx-based FEFET showed remarkable performance as both a logic and a memory device. This was achieved by relatively low-temperature annealing, contributing to the formation of more reversible domain walls in the film. Finally, we demonstrated the feasibility of logic and memory co-integration by common fabrication process with complementary metal-oxide-semiconductor (CMOS) compatibility. English Institute of Electrical and Electronics Engineers Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization Article 10.1109/LED.2022.3219247 1 IEEE Electron Device Letters, v.44, no.1, pp.36 - 39 IEEE Electron Device Letters 44 1 36 39 N scie scopus 000924875500010 2-s2.0-85141626376 Engineering, Electrical & Electronic Engineering Article CERAMICS Ferroelectrics ferroelectric transistor hafnium zirconium oxide ferroelectric memory reversible polarization