Yang, Dongseong Hwang, Kyoungtae Kim, Yeon-Ju Kim, Yunseul Moon, Yina Han, Nara Lee, Minwoo Lee, Seung-Hoon Kim, Dong-Yu 2024-01-19T10:30:46Z 2024-01-19T10:30:46Z 2023-02-03 2023-01 0008-6223 https://pubs.kist.re.kr/handle/201004/114133 Single-walled carbon nanotube (SWNT) is desirable next generation semiconductor for flexible, transparent and even stretchable with exceptional electrical characteristics. Here, high-performance n-type semiconducting SWNT field-effect transistors (s-SWNT-FETs) are achieved by chemical doping using anion-pi interaction between SWNT and anion of tetrabutylammonium fluoride (TBAF) salt. The Fermi level (EF) of SWNT shifts to the con-duction band edge with increasing dopant concentration. The doped s-SWNT-FETs exhibit significant improve-ment in electron mobility (39.4 cm2V- 1s- 1) with high current on/off ratio (>104) compared to those of un-doped device. The doping using anion-pi interaction leads to populate electron density of channel and reduces both channel and contact resistance by 99.0% and 99.6%. Excess carriers introduced by the doping compensate traps by shifting the EF toward conduction band edge. The doped device showed improved current stability after 10 h of bias stress test, while the current of undoped FET decreased by 40.4%. Finally, flexible FETs with TBAF doped s-SWNT network are demonstrated on polyethylene naphthalate substrate and show stable operation after 2000 times bending test. English Pergamon Press Ltd. High-performance carbon nanotube field-effect transistors with electron mobility of 39.4 cm2V-1s-1 using anion-pi interaction doping Article 10.1016/j.carbon.2022.12.025 1 Carbon, v.203, pp.761 - 769 Carbon 203 761 769 N scie scopus 000915238200001 2-s2.0-85144074215 Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article THRESHOLD VOLTAGE SHIFTS THIN-FILM TRANSISTORS N-TYPE CONJUGATED POLYMERS NETWORK TRANSISTORS PURITY AMBIPOLAR DENSITY DISPERSION TRANSPORT Single -walled carbon nanotubes Field-effect transistors n -type doping Anion-? interaction Flexible devices