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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Minjong</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Tae&#x20;Wook</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;Chang&#x20;Yong</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Kimoon</dcvalue>
<dcvalue element="contributor" qualifier="author">Taniguchi,&#x20;Takashi</dcvalue>
<dcvalue element="contributor" qualifier="author">Watanabe,&#x20;Kenji</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Min-gu</dcvalue>
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;Do&#x20;Kyung</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Young&#x20;Tack</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T10:30:52Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T10:30:52Z</dcvalue>
<dcvalue element="date" qualifier="created">2023-02-03</dcvalue>
<dcvalue element="date" qualifier="issued">2023-01</dcvalue>
<dcvalue element="identifier" qualifier="issn">2311-6706</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;114138</dcvalue>
<dcvalue element="description" qualifier="abstract">Two-dimensional&#x20;van&#x20;der&#x20;Waals&#x20;(2D&#x20;vdW)&#x20;material-based&#x20;heterostructure&#x20;devices&#x20;have&#x20;been&#x20;widely&#x20;studied&#x20;for&#x20;high-end&#x20;electronic&#x20;applications&#x20;owing&#x20;to&#x20;their&#x20;heterojunction&#x20;properties.&#x20;In&#x20;this&#x20;study,&#x20;we&#x20;demonstrate&#x20;graphene&#x20;(Gr)-bridge&#x20;heterostructure&#x20;devices&#x20;consisting&#x20;of&#x20;laterally&#x20;series-connected&#x20;ambipolar&#x20;semiconductor&#x2F;Gr-bridge&#x2F;n-type&#x20;molybdenum&#x20;disulfide&#x20;as&#x20;a&#x20;channel&#x20;material&#x20;for&#x20;field-effect&#x20;transistors&#x20;(FET).&#x20;Unlike&#x20;conventional&#x20;FET&#x20;operation,&#x20;our&#x20;Gr-bridge&#x20;devices&#x20;exhibit&#x20;non-classical&#x20;transfer&#x20;characteristics&#x20;(humped&#x20;transfer&#x20;curve),&#x20;thus&#x20;possessing&#x20;a&#x20;negative&#x20;differential&#x20;transconductance.&#x20;These&#x20;phenomena&#x20;are&#x20;interpreted&#x20;as&#x20;the&#x20;operating&#x20;behavior&#x20;in&#x20;two&#x20;series-connected&#x20;FETs,&#x20;and&#x20;they&#x20;result&#x20;from&#x20;the&#x20;gate-tunable&#x20;contact&#x20;capacity&#x20;of&#x20;the&#x20;Gr-bridge&#x20;layer.&#x20;Multi-value&#x20;logic&#x20;inverters&#x20;and&#x20;frequency&#x20;tripler&#x20;circuits&#x20;are&#x20;successfully&#x20;demonstrated&#x20;using&#x20;ambipolar&#x20;semiconductors&#x20;with&#x20;narrow-&#x20;and&#x20;wide-bandgap&#x20;materials&#x20;as&#x20;more&#x20;advanced&#x20;circuit&#x20;applications&#x20;based&#x20;on&#x20;non-classical&#x20;transfer&#x20;characteristics.&#x20;Thus,&#x20;we&#x20;believe&#x20;that&#x20;our&#x20;innovative&#x20;and&#x20;straightforward&#x20;device&#x20;structure&#x20;engineering&#x20;will&#x20;be&#x20;a&#x20;promising&#x20;technique&#x20;for&#x20;future&#x20;multi-functional&#x20;circuit&#x20;applications&#x20;of&#x20;2D&#x20;nanoelectronics.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">SHANGHAI&#x20;JIAO&#x20;TONG&#x20;UNIV&#x20;PRESS</dcvalue>
<dcvalue element="title" qualifier="none">Graphene&#x20;Bridge&#x20;Heterostructure&#x20;Devices&#x20;for&#x20;Negative&#x20;Differential&#x20;Transconductance&#x20;Circuit&#x20;Applications</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1007&#x2F;s40820-022-01001-5</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">Nano-Micro&#x20;Letters,&#x20;v.15,&#x20;no.1</dcvalue>
<dcvalue element="citation" qualifier="title">Nano-Micro&#x20;Letters</dcvalue>
<dcvalue element="citation" qualifier="volume">15</dcvalue>
<dcvalue element="citation" qualifier="number">1</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">Y</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000905971800005</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85145350580</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FIELD-EFFECT&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">HEXAGONAL&#x20;BORON-NITRIDE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">LIGHT-EMITTING&#x20;DIODE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OPTICAL-PROPERTIES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MOS2&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BAND-GAP</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">METAL</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">RESISTANCE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOSHEET</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SCHOTTKY</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Frequency&#x20;tripler</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Graphene&#x20;bridge</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Heterostructure&#x20;device</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Non-classical&#x20;transfer&#x20;characteristics</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Multi-value&#x20;logic&#x20;inverter</dcvalue>
</dublin_core>
