Lee, Seungmin Lee, Sanghyeon Lee, Minkyu Rho, Sung Min Kim, Hyung Tae Won, Chihyeong Yoon, Kukro Kwon, Chaebeen Kim, Juyoung Park, Geun Chul Lim, Jun Hyung Park, Joon Seok Kwon, Woobin Park, Young-Bae Chun, Dong won Kim, Hyun Jae Lee, Taeyoon 2024-01-19T10:32:19Z 2024-01-19T10:32:19Z 2023-01-19 2022-12 1944-8244 https://pubs.kist.re.kr/handle/201004/114208 Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium- gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm2/V center dot s, an on-off ratio above 107, and a low contact resistance of 612 omega. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology. English American Chemical Society Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier Article 10.1021/acsami.2c16593 1 ACS Applied Materials & Interfaces, v.14, no.50, pp.56310 - 56320 ACS Applied Materials & Interfaces 14 50 56310 56320 N scie scopus 000904675000001 2-s2.0-85144533948 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article GA-ZN-O CU DIFFUSION TEMPERATURE ENHANCEMENT ELECTRODES LAYER contact resistance thin film transistor self-assembled monolayer indium-gallium-zinc oxide copper diffusion barrier