Choi, Hyung-Jin Lee, Jun Young Jung, Soo Young Ning, Ruiguang Kim, Min-Seok Jung, Sung-Jin Won, Sung Ok Baek, Seung-Hyub Jang, Ji-Soo 2024-01-19T10:32:48Z 2024-01-19T10:32:48Z 2022-12-22 2022-12 2470-1343 https://pubs.kist.re.kr/handle/201004/114231 We report the epitaxial growth of ((2) over bar 01)-oriented ss-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial ss-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Postannealing improves the crystalline quality of ss-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial ((2) over bar 01) ss-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic ss-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial ss-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics. English ACS Publications Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer Article 10.1021/acsomega.2c04387 1 ACS OMEGA, v.7, no.48, pp.43603 - 43608 ACS OMEGA 7 48 43603 43608 Y scie scopus 000892859800001 2-s2.0-85143082109 Chemistry, Multidisciplinary Chemistry Article