Lee, Jaesang Cho, Seong Won Lee, Young Woong Kwak, Joon Young Kim, Jaewook Jeong, Yeonjoo Hwang, Gyu Weon Park, Seongsik Kim, SangBum Lee, Suyoun 2024-01-19T10:32:53Z 2024-01-19T10:32:53Z 2022-12-15 2022-12 2050-7526 https://pubs.kist.re.kr/handle/201004/114235 The Ovonic threshold switch (OTS) has recently attracted renewed interest for its application in neuromorphic computing devices. One of the remaining problems is the electroforming (EF) process, which requires a switching voltage in the pristine state much higher than that in the subsequent state, the origin of which is still unclear. In this work, using a transport model of the OTS, we have investigated the EF phenomenon in OTS devices to find that it results in an increase in the density of trap states and a decrease in the distance from the Fermi energy to the conduction band, implying a change in its local structures. Based on these findings, the switching material, GeSe in this work, is engineered to have the desired properties for mitigating the EF phenomenon. We have found that, as Sn is doped in GeSe, the local structure prefers edge-sharing XSe2 (X = Ge, Sn) and three-fold bonded orthorhombic structures, while the undoped GeSe prefers corner-sharing GeSe and ethane-like (ETH) Ge2Se6 structures. Such a structural change is found to be in line with the change in the density of trap states by the EF process, resulting in a reduction of the forming voltage with increasing Sn concentration. We believe that these findings will provide important information for designing a switching material for a electroforming-free OTS device. English Royal Society of Chemistry Rational engineering of a switching material for an Ovonic threshold switching (OTS) device with mitigated electroforming Article 10.1039/d2tc03044f 1 Journal of Materials Chemistry C, v.10, no.47, pp.18033 - 18039 Journal of Materials Chemistry C 10 47 18033 18039 N scie scopus 000891606400001 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MODEL STATES GAP GE