Choi, Kyung Hwan Cho, Sooheon Jeong, Byung Joo Lee, Bom Jeon, Jiho Kang, Jinsu Zhang, Xiaojie Oh, Hyung-Suk Lee, Jae-Hyun Yu, Hak Ki Choi, Jae-Young 2024-01-19T10:33:34Z 2024-01-19T10:33:34Z 2022-10-13 2022-12 0925-8388 https://pubs.kist.re.kr/handle/201004/114261 We experimentally demonstrate for the first time that the bulk InSeI crystals can be effectively delaminated by micromechanical exfoliation into a few nanometer-scale InSeI nanowires, due to the presence of weak van der Waals (vdWs) interaction within the crystal lattice. The exfoliated InSeI nanowires show one-dimensional (1D) bundle structure, and the work function of InSeI measured by Scanning Kelvin probe microscopy shows strong dependency on its thickness. The InSeI has a large bandgap corresponding to 2.12 eV, and when applied to a UV-detecting device, it was confirmed that the device with excellent sen-sitivity can be obtained, because there is little interference in the infrared and visible light regions. Based on these results, InSeI could be a excellent candidate as an additional 1D vdWs material for optoelectronics, including photodetectors or photovoltaic devices.(c) 2022 Elsevier B.V. All rights reserved. English Elsevier BV One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications Article 10.1016/j.jallcom.2022.166995 1 Journal of Alloys and Compounds, v.927 Journal of Alloys and Compounds 927 N scie scopus 000861939900003 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article MOS2 TRANSITION GROWTH One-dimensional van der Waals Nanowires Optical property Scanning Kelvin probe microscopy UV -detectors