Yim, Haena Yoo, So Yeon Choi, Haneul Chang, Hye Jung Hwang, Seong-Ju Nahm, Sahn Osada, Minoru Choi, Ji-Won 2024-01-19T10:33:36Z 2024-01-19T10:33:36Z 2022-10-13 2022-12 0925-8388 https://pubs.kist.re.kr/handle/201004/114263 The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion-Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1-x)Bi2xNb3O10-delta na-nosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 50 0-the highest among all known dielectrics in ultrathin films (< 20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics.(c) 2022 Published by Elsevier B.V. English Elsevier BV Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films Article 10.1016/j.jallcom.2022.166606 1 Journal of Alloys and Compounds, v.925 Journal of Alloys and Compounds 925 N scie scopus 000862935600002 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article GRAIN-SIZE DEAD-LAYER Perovskite Dielectric Atomic modification Nanosheet Chemical exfoliation