Jeon, Jiho Woo, Chaeheon Choi, Kyung Hwan Jeong, Byung Joo Kang, Jinsu Zhang, Xiaojie Dong, Xue Kim, Tae Yeong Ahn, Jungyoon Oh, Hyung-Suk Yu, Hak Ki Choi, Jae -Young 2024-01-19T10:33:41Z 2024-01-19T10:33:41Z 2022-09-22 2022-12 0925-8388 https://pubs.kist.re.kr/handle/201004/114266 For the first time, a new structure of Ta2Ni3S8, one of the family systems of M2N3X8, a recently studied one-dimensional chalcogenide material, was synthesized. Unlike Ta2Ni3S8 in the orthorhombic phase, which is known to have semiconductor properties, Ta2Ni3S8 in the tetragonal phase displayed metallic material properties. Structural analysis through X-ray diffraction confirmed that the tetragonal Ta2Ni3S8 (T-Ta2Ni3S8) had the same structure as the tetragonal Ta2Ni3Se8 (T-Ta2Ni3Se8), a material with an S-and Se-substitution; the only difference was the lattice constant. Additionally, different elemental analyses were used to confirm that the ratio of Ta:Ni:S elements was 2:3:8. This study is significant as basic research that can be applied to various electronic devices by applying bandgap tuning and lattice-matched electrode design based on M2N3X8 family material.(c) 2022 Elsevier B.V. All rights reserved. English Elsevier BV Synthesis and polymorphism of a new phase 1D chalcogenide M2N3X8 structure based on the periodic table: Ta2Ni3S8 with a tetragonal structure Article 10.1016/j.jallcom.2022.166752 1 Journal of Alloys and Compounds, v.926 Journal of Alloys and Compounds 926 N scie scopus 000852180900001 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article SINGLE-LAYER MOS2 TRANSITION Polymorphism Low-dimensional materials 1D chalcogenide M2N3X8 Ta2Ni3S8