Han, Jae-Hoon Takenaka, Mitsuru Takagi, Shinichi 2024-01-19T10:38:35Z 2024-01-19T10:38:35Z 2022-02-28 2018-07 2166-8884 https://pubs.kist.re.kr/handle/201004/114351 Material engineering for semiconductor-insulator-semiconductor (SIS) structures is important for a high-performance optical modulator. We have suggested an InGaAsP/Si hybrid SIS structure using direct wafer bonding with high-k dielectrics for using high electron effect in InGaAsP. English IEEE Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation Conference 1 23rd Opto-Electronics and Communications Conference (OECC) 23rd Opto-Electronics and Communications Conference (OECC) US Jeju, SOUTH KOREA 2018-07-02 23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018) 000477695500178