Lee, Jung Hun Choi, Heon Jin Park, Jong Keuk Jeongl, Jeung Hyun Kim, Won Mok 2024-01-19T10:38:52Z 2024-01-19T10:38:52Z 2022-02-28 2018-06 2159-2330 https://pubs.kist.re.kr/handle/201004/114361 The influence of post-annealing on the solar cell performance of Cu2ZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450 degrees C and then at 550 degrees C was adopted for the sulfurization of the stacked precursor in the mixed N-2+H2S atmosphere. The post-annealing was performed at 300 degrees C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS. English IEEE Effect of Post-annealing on the Solar Cell Performance of Cu2ZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with H2S Gas Conference 1 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, pp.0135 - 0138 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC 0135 0138 US Waikoloa, HI 2018-06-10 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) 000469200400030