Lee, Sangah Lee, Jaesung Shin, Myunghoon Min, Byungkoun Lee, Yoojeong 2024-01-19T10:38:55Z 2024-01-19T10:38:55Z 2022-02-28 2018-06 2159-2330 https://pubs.kist.re.kr/handle/201004/114364 Defect models are investigated for graded bandgap structured copper indium gallium selenide (CIGS) cells, which are fabricated using a solution based process. We have numerically simulated the cell performances for Gaussian and tail defects in mid gap and forbidden bands of each layer of the CIGS solar cell by using a computer-aided design program. By comparing the simulation results with the measurements, it is found that the donor-type defects in the valence band of CIGS absorber need to be reduced to further improve the CIGS cells. Based on this result, high performance CIGS cells can be developed in the future. English IEEE Numerical simulation of CIGS solar cell for defect modeling Conference 1 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, pp.1914 - 1917 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC 1914 1917 US Waikoloa, HI 2018-06-10 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) 000469200401208 2-s2.0-85059906195