<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Seo,&#x20;Jae&#x20;Eun</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;Eunpyo</dcvalue>
<dcvalue element="contributor" qualifier="author">Das,&#x20;Tanmoy</dcvalue>
<dcvalue element="contributor" qualifier="author">Kwak,&#x20;Joon&#x20;Young</dcvalue>
<dcvalue element="contributor" qualifier="author">Chang,&#x20;Jiwon</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T11:01:04Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T11:01:04Z</dcvalue>
<dcvalue element="date" qualifier="created">2022-08-04</dcvalue>
<dcvalue element="date" qualifier="issued">2022-11</dcvalue>
<dcvalue element="identifier" qualifier="issn">2199-160X</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;114437</dcvalue>
<dcvalue element="description" qualifier="abstract">In&#x20;this&#x20;study,&#x20;PdSe2&#x20;n-&#x20;and&#x20;p-metal-oxide&#x20;semiconductor&#x20;field-effect&#x20;transistors&#x20;(MOSFETs)&#x20;are&#x20;realized&#x20;using&#x20;the&#x20;same&#x20;conventional&#x20;metal&#x20;contact&#x20;without&#x20;any&#x20;doping&#x20;processes&#x20;through&#x20;utilizing&#x20;the&#x20;thickness-dependent&#x20;phase&#x20;transition&#x20;in&#x20;PdSe2.&#x20;PdSe2&#x20;is&#x20;semiconducting&#x20;with&#x20;a&#x20;sizable&#x20;band&#x20;gap&#x20;in&#x20;a&#x20;few&#x20;layers&#x20;while&#x20;semimetallic&#x20;in&#x20;bulk.&#x20;With&#x20;the&#x20;thin&#x20;semiconducting&#x20;PdSe2&#x20;for&#x20;the&#x20;channel&#x20;and&#x20;the&#x20;conventional&#x20;metal&#x20;source&#x2F;drain,&#x20;an&#x20;n-type&#x20;behavior&#x20;is&#x20;achieved,&#x20;whereas&#x20;a&#x20;p-type&#x20;behavior&#x20;with&#x20;the&#x20;thin&#x20;PdSe2&#x20;channel&#x20;and&#x20;the&#x20;thick&#x20;semimetallic&#x20;PdSe2&#x20;source&#x2F;drain.&#x20;To&#x20;understand&#x20;the&#x20;carrier&#x20;injection&#x20;at&#x20;the&#x20;interface&#x20;between&#x20;the&#x20;thin&#x20;PdSe2&#x20;channel&#x20;and&#x20;the&#x20;thick&#x20;PdSe2&#x20;source&#x2F;drain,&#x20;a&#x20;rigorous&#x20;analysis&#x20;of&#x20;the&#x20;band&#x20;alignment&#x20;and&#x20;the&#x20;temperature-dependent&#x20;transfer&#x20;characteristics&#x20;is&#x20;presented&#x20;to&#x20;extract&#x20;the&#x20;Schottky&#x20;barrier&#x20;height&#x20;at&#x20;the&#x20;interface.&#x20;Additionally,&#x20;interconnecting&#x20;PdSe2&#x20;n-&#x20;and&#x20;p-MOSFETs&#x20;successfully&#x20;demonstrate&#x20;complementary&#x20;metal-oxide&#x20;semiconductor&#x20;(CMOS)&#x20;inverter&#x20;with&#x20;clear&#x20;voltage&#x20;transfer&#x20;characteristics.&#x20;The&#x20;proposed&#x20;approach&#x20;to&#x20;control&#x20;the&#x20;polarity&#x20;of&#x20;PdSe2&#x20;MOSFETs&#x20;using&#x20;the&#x20;unique&#x20;thickness-dependent&#x20;phase&#x20;transition&#x20;in&#x20;PdSe2&#x20;is&#x20;promising&#x20;for&#x20;realizing&#x20;the&#x20;CMOS&#x20;logic&#x20;circuit&#x20;with&#x20;the&#x20;same&#x20;channel&#x20;material&#x20;and&#x20;single&#x20;contact&#x20;metal.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">WILEY</dcvalue>
<dcvalue element="title" qualifier="none">Demonstration&#x20;of&#x20;PdSe2&#x20;CMOS&#x20;Using&#x20;Same&#x20;Metal&#x20;Contact&#x20;in&#x20;PdSe2&#x20;n-&#x2F;p-MOSFETs&#x20;through&#x20;Thickness-Dependent&#x20;Phase&#x20;Transition</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1002&#x2F;aelm.202200485</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">ADVANCED&#x20;ELECTRONIC&#x20;MATERIALS,&#x20;v.8,&#x20;no.11</dcvalue>
<dcvalue element="citation" qualifier="title">ADVANCED&#x20;ELECTRONIC&#x20;MATERIALS</dcvalue>
<dcvalue element="citation" qualifier="volume">8</dcvalue>
<dcvalue element="citation" qualifier="number">11</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">N</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000827807000001</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FIELD-EFFECT&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MONOLAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">DOPING-FREE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">WSE2</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">JUNCTION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">INVERTERS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">DEVICE</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">complementary&#x20;metal-oxide&#x20;semiconductor&#x20;(CMOS)&#x20;inverter</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">PdSe</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">(2)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">phase&#x20;transition</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">polarity&#x20;control</dcvalue>
</dublin_core>
