Jo, Wonhyuk Kee, Jungyun Kim, Kooktea Landahl, Eric C. Longbons, Grace Walko, Donald A. Wen, Haidan Lee, Dong Ryeol Lee, Sooheyong 2024-01-19T11:01:22Z 2024-01-19T11:01:22Z 2022-11-16 2022-10 2045-2322 https://pubs.kist.re.kr/handle/201004/114450 Scattering of energetic charge carriers and their coupling to lattice vibrations (phonons) in dielectric materials and semiconductors are crucial processes that determine the functional limits of optoelectronics, photovoltaics, and photocatalysts. The strength of these energy exchanges is often described by the electron-phonon coupling coefficient, which is difficult to measure due to the microscopic time- and length-scales involved. In the present study, we propose an alternate means to quantify the coupling parameter along with thermal boundary resistance and electron conductivity by performing a high angular-resolution time-resolved X-ray diffraction measurement of propagating lattice deformation following laser excitation of a nanoscale, polycrystalline metal film on a semiconductor substrate. Our data present direct experimental evidence for identifying the ballistic and diffusive transport components occurring at the interface, where only the latter participates in thermal diffusion. This approach provides a robust measurement that can be applied to investigate microscopic energy transport in various solid-state materials. English Nature Publishing Group Structural measurement of electron-phonon coupling and electronic thermal transport across a metal-semiconductor interface Article 10.1038/s41598-022-20715-5 1 Scientific Reports, v.12, no.1 Scientific Reports 12 1 Y scie scopus 000864277100035 Multidisciplinary Sciences Science & Technology - Other Topics Article X-RAY-DIFFRACTION MEAN FREE-PATH CONDUCTIVITY SURFACE MULTILAYERS RESISTIVITY GENERATION MODEL FILMS HEAT