Kwon, Jae Uk Song, Young Geun Kim, Ji Eun Chun, Suk Yeop Kim, Gu Hyun Noh, Gichang Kwak, Joon Young Hur, Sunghoon Kang, Chong-Yun Jeong, Doo Seok Oh, Soong Ju Yoon, Jung Ho 2024-01-19T11:02:15Z 2024-01-19T11:02:15Z 2022-10-20 2022-10 1944-8244 https://pubs.kist.re.kr/handle/201004/114493 The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually require an electroforming process for subsequent switching operations, which induces large device-to-device variations. In addition, the hard-to-control redox reaction during repeated switching causes random fluctuations or degradation of each resistance state, hindering reliable switching operations. In this study, an HfO2 nanorod (NR)-based memristor is proposed for simultaneously achieving highly uniform, electroforming-free, fast, and reliable analogue switching properties. The well-controlled redox reaction due to the easy gas exchange with the environment at the surface of the NRs enhances the generation of oxygen or oxygen vacancies during the switching operation, resulting in electroforming-free and reliable switching behavior. In addition, the one-dimensional surface growth of CFs facilitates highly linear conductance modulation with smaller conductance changes compared with the two-dimensional volume growth in thin-film-based memristors, resulting in a high accuracy of >92% in the Modified National Institute of Standards and Technology pattern-recognition test and desirable spike-timing-dependent plasticity. English American Chemical Society Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing Article 10.1021/acsami.2c12247 1 ACS Applied Materials & Interfaces, v.14, no.39, pp.44550 - 44560 ACS Applied Materials & Interfaces 14 39 44550 44560 N scie scopus 000863247600001 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article RESISTIVE SWITCHING MEMORY DEPENDENCE MECHANISMS DEVICES memristor surface-dominated nanorod neuromorphic computing conductance modulation