Kim, Yeonhwa Chu, Rafael Jumar Abella Ryu, Geunhwan Woo, Seungwan Lung, Quang Nhat Dang Ahn, Dae-Hwan Han, Jae-Hoon Choi, Won Jun Jung, Daehwan 2024-01-19T11:03:43Z 2024-01-19T11:03:43Z 2022-10-13 2022-09 1944-8244 https://pubs.kist.re.kr/handle/201004/114568 We report on the photoluminescence enhancement of 1.3 mu m InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coalesced QD density from 6.5 x 108 to 1.9 x 109 cm-2 but also decrease the QD photoluminescence emission intensity dramatically. Inserting an Al0.4Ga0.6As potential barrier layer maintained strong photoluminescence from the QDs by effectively suppressing carrier leakage to the GaAs/Si interfacial region even when the GaAs buffer was thinned to 250 nm. We then fabricated a light-emitting diode using the ultrathin 250 nm GaAs buffer on Si and confirmed strong electroluminescence peaking at 1.28 mu m without interfacial defect emission at room temperature. We believe that this work is promising for monolithically integrated evanescent Si lasers using InAs/GaAs QDs. English American Chemical Society Enhanced Photoluminescence of 1.3μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission Article 10.1021/acsami.2c14492 1 ACS Applied Materials & Interfaces, v.14, no.39, pp.45051 - 45058 ACS Applied Materials & Interfaces 14 39 45051 45058 N scie scopus 000862798800001 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article SI LASERS ISLANDS LAYERS quantum dot epitaxy silicon photonics photoluminescence electroluminescence defect