Park, Sewon Ha, Jisang Khan, Muhammad Farooq Im, Chaekwang Park, Jae Young Yoo, Sang Hyuk Rehman, Malik Abdul Kang, Keonwook Lee, Soo Hyun Jun, Seong Chan 2024-01-19T11:04:08Z 2024-01-19T11:04:08Z 2022-09-15 2022-09 2637-6113 https://pubs.kist.re.kr/handle/201004/114589 Two-dimensional layered materials have attracted attention for optoelectronic applications owing to their remarkable photonic properties. Here, we report a homojunction device fabricated using n-type ReS2 flakes; the device exhibits p-n diode characteristics. The band structures of 1-5 L ReS2 are theoretically calculated, and the insensitivity of work function to the thickness is experimentally investigated using Kelvin probe force microscopy. The contact resistance and intrinsic mobility of ReS2 field-effect transistors with different thicknesses are evaluated using the Y-function method (YFM). As the thickness of the flakes increases, the contact resistance decreases while the intrinsic mobility increases, leading to a reduction in the threshold voltage. Moreover, the rectifying behavior of a vertical ReS2 (thin)-ReS2 (thick) homostructure is measured at various bias and gate voltages, where the devices exhibit a noticeable rectification ratio of similar to 4 x 10(2) at V-d = 5 V and V-g = 20 V. The ideality factor of the devices is similar to 1.16 at V-g = -20 V. In addition, broadband near-infrared (NIR) response of the single-flake homostructure of ReS2 is observed, and it exhibited a responsivity of 170.9 A W-1 at 365 nm. Our study of the ReS2 homostructure leads to the advancement in electronic devices, such as photodetectors, transistors, and photovoltaic cells of new technology. English AMER CHEMICAL SOC Pronounced Optoelectronic Effect in n-n ReS2 Homostructure Article 10.1021/acsaelm.2c00567 1 ACS Applied Electronic Materials, v.4, no.9, pp.4306 - 4315 ACS Applied Electronic Materials 4 9 4306 4315 N scie scopus 000849328400001 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article HOMOTYPE HETEROJUNCTION THIN-FILM BAND-GAP TRANSITION METAL HOMOJUNCTION JUNCTION PHOTODETECTION SPECTROSCOPY FABRICATION ReS2 homostructure density functional theory field-effect transistor infrared responsivity