Kim, Bong Ho Kuk, Song-hyeon Kim, Seong Kwang Kim, Joon Pyo Geum, Dae-Myeong Baek, Seung-Hyub Kim, Sang Hyeon 2024-01-19T11:04:11Z 2024-01-19T11:04:11Z 2022-09-15 2022-09 2516-0230 https://pubs.kist.re.kr/handle/201004/114592 HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage (V-sw), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrOx-based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. V-sw of a capacitor with scavenging decreased by 18% and the same P-r could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 10(6) cycles were achieved. We believe oxygen scavenging has great potential for future HfZrOx-based memory device applications. English The Royal Society of Chemistry Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties Article 10.1039/d2na00533f 1 Nanoscale Advances, v.4, no.19, pp.4114 - 4121 Nanoscale Advances 4 19 4114 4121 Y scie scopus 000849267900001 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article LAYER RELIABILITY DEPOSITION FILMS