Lu, W. Roh, I. P. Geum, D. -M. del Alamo, J. A. Song, J. D. Kong, L. Kim, S. -H. 2024-01-19T11:07:00Z 2024-01-19T11:07:00Z 2022-02-28 2017-12 2380-9248 https://pubs.kist.re.kr/handle/201004/114603 We have fabricated self-aligned InGaSb p-channel FinFETs using a novel antimonide-compatible digital etch. This is the first demonstration of digital etch on InGaSb-based transistors of any kind. It has enabled the first fabricated InGaSb FinFETs featuring fin widths down to 10 nm and gate lengths of 20 nm. Single fin transistors with W-f = 10 nm and channel height of 23 nm (fin aspect ratio of 2.3) have achieved a record transconductance of 160 mu S/mu m at V-DS = 0.5 V. When normalized to device footprint, it reaches a record high g(m)= 704 mu S/mu m. Digital etch has been shown to effectively improve the turn-off characteristics of the devices. English IEEE 10-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch Conference 1 63rd IEEE Annual International Electron Devices Meeting (IEDM) 63rd IEEE Annual International Electron Devices Meeting (IEDM) US San Francisco, CA 2017-12-02 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 000424868900106 2-s2.0-85045186035