Jeon, Dae-Young Baldauf, Tim Park, So Jeong Weber, Walter M. Baraban, Larysa Cuniberti, Gianaurelio Mikolajick, Thomas Pregl, Sebastian 2024-01-19T11:07:12Z 2024-01-19T11:07:12Z 2022-02-28 2017-09 1930-8876 https://pubs.kist.re.kr/handle/201004/114608 In this paper the operation mechanism of ambipolar Si-nanowire (Si-NW) Schottky-barrier (SB) FETs is discussed in detail using temperature dependent current-voltage (I-V) contour maps. Thermionic and field emission mechanism limited the overall conduction behavior of ambipolar Si-NW SB-FETs with considerable SB-height. However, Si-channel dominant transports with phonon scattering mechanism occur even in the SB based device at a specific bias condition, where charge carrier injection is saturated with a very thinned SB. Temperature dependent transconductance (g(m)) behavior, TCAD simulation and extracted activation energy (E-ac) maps also support the explained operation principle of ambipolar Si-NW SB-FETs. English IEEE In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs Conference 1 47th European Solid-State Device Research Conference (ESSDERC), pp.304 - 307 47th European Solid-State Device Research Conference (ESSDERC) 304 307 US Leuven, BELGIUM 2017-09-11 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) 000426914100076 2-s2.0-85033472122