Hu, Yu Joo, Ji-Eun Lee, Myung-Jae Park, Sung Min 2024-01-19T11:31:07Z 2024-01-19T11:31:07Z 2022-12-09 2022-08 1598-1657 https://pubs.kist.re.kr/handle/201004/114773 This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+/N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBO transimpedance gain, 608-MHz bandwidth, 4.54pA/vHz noise current spectral density, 26.4- dB dynamic range that corresponds to the input currents of 2.38 mu App similar to 50 mu App, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2. English 대한전자공학회 An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors Article 10.5573/JSTS.2022.22.4.275 1 Journal of Semiconductor Technology and Science, v.22, no.4, pp.275 - 281 Journal of Semiconductor Technology and Science 22 4 275 281 N scie scopus kci ART002866828 000889146800008 2-s2.0-85137259572 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article FRONT-END CIRCUIT CMOS cross-coupled feedforward optoelectronic TIA