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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Kim,&#x20;H.J.</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;J.</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;T.G.</dcvalue>
<dcvalue element="contributor" qualifier="author">Yoon,&#x20;J.H.</dcvalue>
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;C.S.</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T11:32:54Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T11:32:54Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2022-08</dcvalue>
<dcvalue element="identifier" qualifier="issn">2199-160X</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;114857</dcvalue>
<dcvalue element="description" qualifier="abstract">Memristor&#x20;is&#x20;considered&#x20;as&#x20;one&#x20;of&#x20;the&#x20;key&#x20;components&#x20;of&#x20;neuromorphic&#x20;hardware&#x20;aiming&#x20;to&#x20;overcome&#x20;the&#x20;limitations&#x20;of&#x20;classical&#x20;von&#x20;Neumann&#x20;computers,&#x20;but&#x20;the&#x20;continuous&#x20;control&#x20;of&#x20;the&#x20;device&#x20;conduction&#x20;remains&#x20;a&#x20;challenge.&#x20;Random&#x20;and&#x20;stochastic&#x20;dynamics&#x20;of&#x20;weak&#x20;conducting&#x20;filaments&#x20;(CF)&#x20;hinder&#x20;the&#x20;precise&#x20;control&#x20;of&#x20;the&#x20;resistance&#x20;states,&#x20;particularly&#x20;in&#x20;the&#x20;conductive&#x20;bridge&#x20;random&#x20;access&#x20;memory&#x20;(CBRAM).&#x20;The&#x20;problem&#x20;of&#x20;random&#x20;and&#x20;stochastic&#x20;resistive&#x20;switching&#x20;of&#x20;the&#x20;Cu-based&#x20;CBRAM&#x20;is&#x20;largely&#x20;mitigated&#x20;by&#x20;inserting&#x20;the&#x20;Cu-cone&#x20;as&#x20;a&#x20;cation&#x20;source&#x20;into&#x20;the&#x20;memory&#x20;cell&#x20;(Cu-cone&#x20;device).&#x20;The&#x20;electric&#x20;field&#x20;concentrated&#x20;on&#x20;the&#x20;Cu-cone&#x20;induces&#x20;stronger&#x20;CF&#x20;with&#x20;a&#x20;limited&#x20;number&#x20;near&#x20;the&#x20;tip&#x20;region,&#x20;making&#x20;the&#x20;device&#x20;feature&#x20;distinctive&#x20;from&#x20;the&#x20;planar&#x20;Cu&#x20;CBRAM.&#x20;The&#x20;Cu-cone&#x20;device&#x20;exhibits&#x20;enhanced&#x20;resistance&#x20;controllability&#x20;attributed&#x20;to&#x20;the&#x20;well-controlled&#x20;CF,&#x20;improved&#x20;switching&#x20;reliability&#x20;improvement,&#x20;and&#x20;multiple&#x20;intermediate&#x20;resistance&#x20;states.&#x20;Such&#x20;features&#x20;are&#x20;used&#x20;to&#x20;explore&#x20;its&#x20;usefulness&#x20;as&#x20;an&#x20;artificial&#x20;synapse,&#x20;where&#x20;fluent&#x20;potentiation&#x20;and&#x20;depression&#x20;can&#x20;be&#x20;achieved&#x20;using&#x20;voltage&#x20;pulses.&#x20;Further&#x20;research&#x20;is&#x20;still&#x20;required&#x20;to&#x20;emulate&#x20;the&#x20;artificial&#x20;synapses&#x20;fully,&#x20;but&#x20;the&#x20;feasibility&#x20;is&#x20;presented&#x20;in&#x20;this&#x20;work&#x20;by&#x20;exploiting&#x20;the&#x20;similarities&#x20;between&#x20;the&#x20;Cu&#x20;cations&#x20;in&#x20;the&#x20;CBRAM&#x20;device&#x20;and&#x20;the&#x20;Ca2+&#x20;dynamics&#x20;in&#x20;a&#x20;biological&#x20;synapse.&#x20;？&#x20;2021&#x20;Wiley-VCH&#x20;GmbH</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">Blackwell&#x20;Publishing&#x20;Ltd</dcvalue>
<dcvalue element="title" qualifier="none">Multi-Level&#x20;Control&#x20;of&#x20;Conductive&#x20;Filament&#x20;Evolution&#x20;and&#x20;Enhanced&#x20;Resistance&#x20;Controllability&#x20;of&#x20;the&#x20;Cu-Cone&#x20;Structure&#x20;Embedded&#x20;Conductive&#x20;Bridge&#x20;Random&#x20;Access&#x20;Memory</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1002&#x2F;aelm.202100209</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">Advanced&#x20;Electronic&#x20;Materials,&#x20;v.8,&#x20;no.8</dcvalue>
<dcvalue element="citation" qualifier="title">Advanced&#x20;Electronic&#x20;Materials</dcvalue>
<dcvalue element="citation" qualifier="volume">8</dcvalue>
<dcvalue element="citation" qualifier="number">8</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">N</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000663951100001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85108284744</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Biology</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Copper</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Copper&#x20;compounds</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Electric&#x20;fields</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Positive&#x20;ions</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Stochastic&#x20;systems</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Conducting&#x20;filament</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Conductive&#x20;filaments</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Conductive-bridge&#x20;random&#x20;access&#x20;memory&#x20;(cbram)</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Intermediate&#x20;resistance</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Neuromorphic&#x20;hardwares</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Random&#x20;access&#x20;memory</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Reliability&#x20;improvement</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Stochastic&#x20;dynamics</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">Random&#x20;access&#x20;storage</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">analog&#x20;switching</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">conductive&#x20;bridge&#x20;random&#x20;access&#x20;memory</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Cu-cone&#x20;device</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">field&#x20;concentration&#x20;effect</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">resistive&#x20;switching&#x20;memory</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">synaptic&#x20;application</dcvalue>
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