Lee, Minjong Park, Chang Yong Hwang, Do Kyung Kim, Min-gu Lee, Young Tack 2024-01-19T11:33:45Z 2024-01-19T11:33:45Z 2022-07-21 2022-07 2397-7132 https://pubs.kist.re.kr/handle/201004/114898 Two-dimensional (2D) materials have been extensively adopted in various device architectures for advanced applications owing to their structural diversity, high functionality, and ease of integration. Among the various architectures, split-gate field-effect transistors (SG-FETs) have been widely studied based on their sequentially located SG electrode along the source/drain electrodes. In this paper, we propose two different homogeneous molybdenum disulfide (MoS2)-based SG-FET structures, namely AND-FET and OR-FET, whose gap directions are perpendicular to each other. It can exhibit AND or OR switching characteristics if it has a longitudinal or latitudinal gapped SG structure, respectively. Moreover, the AND-FET and OR-FET are regarded as folded structures of series and parallel connections of two n-type transistors. By using these switching devices, we successfully demonstrate NAND and NOR logic gates through a single active channel. These approaches are expected to pave the way for the realization of multi-functionality and high integration of 2D material-based future electronic devices. English NATURE PUBLISHING GROUP Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications Article 10.1038/s41699-022-00320-w 1 Npj 2d Materials and Applications, v.6, no.1 Npj 2d Materials and Applications 6 1 Y scie scopus 000822347200001 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article LIGHT-EMITTING DIODE INTEGRATED-CIRCUITS GRAPHENE