Jin, Junyoung Park, Tae Hwan Seong, Tae-Yeon Hwang, Gyu Weon 2024-01-19T11:34:02Z 2024-01-19T11:34:02Z 2022-06-23 2022-07 0374-4884 https://pubs.kist.re.kr/handle/201004/114911 The optoelectronic devices based on colloidal lead sulfide quantum dots (PbS QDs) have suffered from electronic trap states in bandgap. The trap state is a source for accelerating carrier recombination and degrading the performance of optoelectronic devices. Here, we treated PbS QD electrochemically using cyclic voltammetry to modulate the density of trap states. The reduction of the trap density in the QD layer after electrochemical treatment was confirmed by the impedance analyzing technique, the thermal admittance spectroscopy. The XPS spectra showed that the QD films are oxidized after the electrochemical treatment, implying that the oxidation of the QD surface regulated the trap density through the electrochemical treatment. English 한국물리학회 Electrochemical modulation of trap states in PbS QDs and their electrical characterization Article 10.1007/s40042-022-00511-0 1 Journal of the Korean Physical Society, v.81, no.1, pp.54 - 58 Journal of the Korean Physical Society 81 1 54 58 N scie scopus kci ART002860894 000808403900001 Physics, Multidisciplinary Physics Article FIELD-EFFECT TRANSISTORS OPEN-CIRCUIT VOLTAGE SUB-BANDGAP STATES QUANTUM DOTS Lead sulfide Quantum dot Cyclic voltammetry Trap passivation Thermal admittance spectroscopy XPS