El Dirani, H. Bawedin, M. Lee, K. Parihar, M. Mescot, X. Fonteneau, P. Galy, Ph. Gamiz, F. Kim, Y-T. Ferrari, P. Cristoloveanu, S. 2024-01-19T11:38:01Z 2024-01-19T11:38:01Z 2022-03-07 2016-10 https://pubs.kist.re.kr/handle/201004/114973 We demonstrate experimentally a capacitorless 1T-DRAM fabricated with 28 nm FDSOI. The Z(2)-FET memory cell features a large current sense margin and long retention time at T = 25 degrees C and 85 degrees C. Systematic measurements show that Z(2)-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory. English IEEE Competitive 1T-DRAM in 28 nm FDSOI Technology for Low-Power Embedded Memory Conference 1 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) US Burlingame, CA 2016-10-10 2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 000392693000033