Chang, Sehwan Jin, Junyoung Kyhm, Jihoon Park, Tae Hwan Ahn, Jongtae Park, Sung-Yul L. Park, Suk In Hwang, Do Kyung CHOI, SANG SOO Seong, Tae-Yeon Song, Jin-Dong Hwang, Gyu Weon 2024-01-19T12:00:53Z 2024-01-19T12:00:53Z 2022-06-30 2022-06 1094-4087 https://pubs.kist.re.kr/handle/201004/115130 We fabricated a 1 x 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 x 10(-3) A/W and 1.20 x 10(-2) A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 +/- 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement English Optical Society of America SWIR imaging using PbS QD photodiode array sensors Article 10.1364/OE.459090 1 Optics Express, v.30, no.12, pp.20659 - 20665 Optics Express 30 12 20659 20665 Y scie scopus 000810533400040 Optics Optics Article FULL-COLOR QUANTUM PHOTODETECTORS SILICON