Sun, Yukun Fan, Shizhao Jung, Daehwan Hool, Ryan D. Li, Brian Vaisman, Michelle Lee, Minjoo 2024-01-19T12:01:13Z 2024-01-19T12:01:13Z 2022-06-17 2022-06 2156-3381 https://pubs.kist.re.kr/handle/201004/115147 We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by $\text{Ga}_{0.51} \text{In}_{0.49}\text{P}$ clads is improved by a factor of similar to 5 x $10<^>5$. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method. English IEEE Electron Devices Society Delta-Doping for Enhanced III-V Tunnel Junction Performance Article 10.1109/JPHOTOV.2022.3176217 1 IEEE Journal of Photovoltaics, v.12, no.4, pp.976 - 981 IEEE Journal of Photovoltaics 12 4 976 981 N scie scopus 000805813700001 Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Energy & Fuels Materials Science Physics Article; Early Access TEMPERATURE-GROWN-GAAS ALGAAS Tunneling Doping Gallium arsenide Epitaxial growth Annealing Thermal loading Epitaxial layers Delta doping tunnel junctions (TJs)