Jeon, Dae-Young Mouis, Mireille Barraud, Sylvain Ghibaudo, Gerard 2024-01-19T12:01:27Z 2024-01-19T12:01:27Z 2022-05-27 2022-06 0018-9383 https://pubs.kist.re.kr/handle/201004/115156 Junctionless transistors (JLTs) have promising strengths such as extremely simple structures without p-n junctions, better reliability, and low flicker noise, for overcoming scaling challenges for advanced sub-5-nm nodes. In this article, channel-width-dependent operation in the partially depleted regime of tri-gate JLTs was investigated in comparison to conduction in conventional inversion-mode (IM) transistors. A large difference in transconductance (g(m)) against gate-to-channel capacitance (C-gc) and the reduced amplitude of the first peak on dg(m)/dV(g) were identified under the partially depleted regime in JLTs, due to a severe transverse E-field near-threshold voltage (Vth). However, the impact of E-field was weakened as decreasing channel width of JLTs. These works provide key information for a better understanding of the channel-width-dependent performance of JLTs and for implementing practical applications with them. English Institute of Electrical and Electronics Engineers Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors Article 10.1109/TED.2022.3172056 1 IEEE Transactions on Electron Devices, v.69, no.6, pp.3037 - 3041 IEEE Transactions on Electron Devices 69 6 3037 3041 N scie scopus 000795582000001 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Early Access EXTRACTION MOSFETS VOLTAGE Channel-width dependence nanowire (NW)-like structure partially depleted regime peaks on dg(m)/dV(g) transconductance (g(m)) degradation transverse electric field (E-field) tri-gate junctionless transistors (JLTs)