주지은 이명재 박성민 2024-01-19T12:03:50Z 2024-01-19T12:03:50Z 2022-10-18 2022-04 2384-2113 https://pubs.kist.re.kr/handle/201004/115275 In this paper, an optoelectronic integrated circuit (OEIC) by utilizing a 180-nm CMOS technology for a linear LiDAR sensor in the applications of elder-care systems is presented. It consists of an on-chip avalanche photodiode (APD) a voltage-mode linear transimpedance amplifier, a post-amplifier, a limiting amplifier, and a 50-Ω buffer. Post-layout simulation results show that the proposed OEIC achieves 96-dBΩ transimpedance gain, 780-MHz bandwidth even with 3-pF photodiode capacitance, 5.08-pA/√Hz noise current spectral density, and 29.2-mW power dissipation. The entire chip includes 4-channel arrays, hence occupying the area of 2.0 x 2.5 mm2 together with I/O pads. English 반도체설계교육센터 A CMOS LiDAR Sensor OEIC for Elder-Care Systems Article 10.23075/jicas.2022.8.2.002 2 IDEC Journal of Integrated Circuits and Systems, v.8, no.2, pp.10 - 14 IDEC Journal of Integrated Circuits and Systems 8 2 10 14 N kci other ART002827535 Avalanche photodiode CMOS Elder-care LiDAR Optoelectronic IC