Kuk, Song-Hyeon Han, Seung-Min Kim, Bong Ho Baek, Seung-Hyub Han, Jae-Hoon Kim, Sang-Hyeon 2024-01-19T12:04:12Z 2024-01-19T12:04:12Z 2022-05-27 2022-04 0018-9383 https://pubs.kist.re.kr/handle/201004/115294 Ferroelectric field-effect transistor (FeFET) is a promising nonvolatile memory device because of its CMOS compatibility, scalability, and energy efficiency. However, the device physics has not been studied well, which hinders FeFET development and process design kit (PDK) construction. In this article, we report a comprehensive understanding of the n/p-FeFET operation mechanism as a nonvolatile memory device, for the first time, based on quasi-static split CV measurement. We also suggest a new methodology to examine the device and show the existence of excess trapped charge and the true nonvolatile polarization. Furthermore, we found that charge trapping is necessary to switch polarization in FeFET. Finally, based on our physical findings and insights, we propose a new erase mode that leads to a wider memory window and higher write endurance (> 10(10) cycles), even without optimizing the device fabrication process. English Institute of Electrical and Electronics Engineers An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode Article 10.1109/TED.2022.3154687 1 IEEE Transactions on Electron Devices, v.69, no.4, pp.2080 - 2087 IEEE Transactions on Electron Devices 69 4 2080 2087 N scie scopus 000792933700073 2-s2.0-85126330846 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article MEMORY FILMS Switches Logic gates FeFETs Charge measurement Current measurement Pulse measurements Capacitance Charge trapping ferroelectric memory ferroelectric transistor ferroelectrics hafnium zirconium oxide nonvolatile memory