Kim, Soojin Roh, Yeeun Choi, Younguk Jun, Ah Hyun Seo, Hojun Ju, Byeong-Kwon 2024-01-19T12:04:25Z 2024-01-19T12:04:25Z 2022-05-04 2022-04 https://pubs.kist.re.kr/handle/201004/115306 A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors. English MDPI Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET Article 10.3390/app12083840 1 Applied Sciences-basel, v.12, no.8 Applied Sciences-basel 12 8 Y scie scopus 000786301000001 Chemistry, Multidisciplinary Engineering, Multidisciplinary Materials Science, Multidisciplinary Physics, Applied Chemistry Engineering Materials Science Physics Article FIELD-EFFECT TRANSISTORS TRANSITION MoTe2 transition metal dichalcogenides field-effect transistors doping threshold voltage charge neutrality