Kim, Min Jay Lee, Kyeong Jun Kim, Hyun Don Kim, Hyuk Jin Choi, Byoung Ki Lee, In Hak Khim, Yeong Gwang Heo, Jin Eun Chang, Seo Hyoung Choi, Eunjip Chang, Young Jun 2024-01-19T12:30:27Z 2024-01-19T12:30:27Z 2022-04-05 2022-04 0167-577X https://pubs.kist.re.kr/handle/201004/115473 Zinc telluride (ZnTe) has attracted interests for its semiconducting, optoelectronic, and electrical switching properties. However, the growth mechanism of ultrathin epitaxial films is not well established. Here we present a systematic study of the growth ultrathin ZnTe films on GaAs (001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction and synchrotron based high-resolution X-ray diffraction showed that both surface atomic ordering and single crystalline phase aligned to the substrate orientation with small variation of caxis lattice in the ultrathin films. While the deviation of chemical compositions depended on the growth conditions, information on the variation of the band gap and in-gap states was obtained through spectroscopic ellipsometry analysis. Our study showed that single crystal ZnTe films can serve as a model system in the development of Ovonic threshold switching devices for cross-point device applications. English Elsevier BV Epitaxial growth and optical band gap variation of ultrathin ZnTe films Article 10.1016/j.matlet.2022.131725 1 Materials Letters, v.313 Materials Letters 313 N scie scopus 000766056000002 2-s2.0-85123030249 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ZnTe Molecular beam epitaxy Epitaxial film Optical band gap GaAs substrate