Choi, Han-Hyeong Kim, Hyun Jin Oh, Jinwoo Kim, Minsung Kim, Youngjin Jho, Jae Young Lee, Keun Hyung Son, Jeong Gon Park, Jong Hyuk 2024-01-19T12:30:32Z 2024-01-19T12:30:32Z 2022-04-05 2022-04 1022-1336 https://pubs.kist.re.kr/handle/201004/115478 Interest in resistive random access memory (RRAM) has grown rapidly in recent years for realizing ultrahigh density data storage devices. However, sneak currents in these devices can result in misreading of the data, thus limiting the applicability of RRAM. Complementary resistive switching (CRS) memory consisting of two antiserial RRAMs can considerably reduce sneak currents; however, complicated device architectures and manufacturing processes still remain as challenges. Herein, an effective and simple approach for fabricating CRS memory devices using self-assembled block copolymer micelles is reported. Cu ions are selectively placed in the core of polystyrene-block-poly(2-vinylpyridine) spherical micelles, and a hexagonally packed micelle monolayer is prepared through spin-coating. The micelle monolayer can be a symmetrical resistive switching layer, because the micelles and Cu act as dielectric and active metals in memory devices, respectively. The locally enhanced electric field and Joule heating achieved by the structured Cu atoms inside the micelles promote metal ionization and ion migration in a controlled manner, thus allowing for position selectivity during resistive switching. The micelle-based memory device exhibits stable and reliable CRS behavior, with a nonoverlapping and narrow distribution of threshold voltages. Therefore, this approach is promising for fabricating CRS memory devices for high-performance and ultrahigh-density RRAM applications. English John Wiley & Sons Ltd. Facile Achievement of Complementary Resistive Switching in Block Copolymer Micelle-Based Resistive Memories Article 10.1002/marc.202100686 1 Macromolecular Rapid Communications, v.43, no.7 Macromolecular Rapid Communications 43 7 N scie scopus 000749656900001 2-s2.0-85123683091 Polymer Science Polymer Science Article; Early Access CHARGE-LIMITED CURRENTS NANOPARTICLES MECHANISMS DEVICES block copolymer micelles complementary resistive switching reliability reproducibility resistive random access memory