Lee, Kookjin Ji, Hyunjin Kim, Yanghee Kaczer, Ben Lee, Hyebin Ahn, Jae-Pyoung Choi, Junhee Grill, Alexander Panarella, Luca Smets, Quentin Verreck, Devin Van Beek, Simon Chasin, Adrian Linten, Dimitri Na, Junhong Lee, Jae Woo De Wolf, Ingrid Kim, Gyu-Tae 2024-01-19T12:32:10Z 2024-01-19T12:32:10Z 2022-04-05 2022-03 https://pubs.kist.re.kr/handle/201004/115569 In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO2 generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of V-G > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations. English WILEY Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications Article 10.1002/admi.202102488 1 ADVANCED MATERIALS INTERFACES, v.9, no.9 ADVANCED MATERIALS INTERFACES 9 9 N scie scopus 000751745300001 2-s2.0-85124495105 Chemistry, Multidisciplinary Materials Science, Multidisciplinary Chemistry Materials Science Article; Early Access TRANSPORT-PROPERTIES LARGE-AREA MOS2 MONO DEFECTS 2D materials defects electron beam electron-hole pairs field-effect transistor low-frequency noise